Title :
Prediction and verification of no gate orientation effects for GaAs MESFETS on
Author :
Ueno, K. ; Hida, H. ; Ogawa, Y. ; Tsukada, Y. ; Nozaki, T.
Author_Institution :
NEC Corp., Kawasaki, Japan
Abstract :
Theoretical and experiment investigations based on crystallographic considerations were carried out to study the possibility of avoiding piezoelectric-charge-induced orientation effects. Piezoelectric-charge-induced threshold voltage (V/sub t/) variations for different crystal orientations were estimated by calculating piezoelectric potentials using the effective piezoelectric constant tensor for an arbitrarily oriented FET. Comparison between theoretical prediction and experimental results was made for WSi/sub x/-gate self-aligned GaAs MESFETs fabricated on
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; substrates; 0.5 micron; 300 ms; GaAs; MESFETS; SAG; WSi/sub x/; effective piezoelectric constant tensor; gate orientation effects elimination; piezoelectric potentials; piezoelectric-charge-induced orientation effects; self-aligned gate; threshold voltage variations; Dielectric substrates; FETs; Gallium arsenide; Laboratories; MESFETs; Microelectronics; National electric code; Piezoelectric effect; Tensile stress; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
DOI :
10.1109/IEDM.1988.32943
