Development of a CMOS-compatible electrostatically actuated diaphragm chamber for micropump application

This paper presents the development of a diaphragm chamber actuated electrostatically utilizing CMOS-compatible silicon micromachining fabrication process. The process consists of six photolithography steps and five chemical vapor depositions. Etching of the sacrificial oxide layer for the diaphragm chamber is achieved using etch-release holes perforated on the diaphragm, similar to via holes used in IC-fabrication method. From the analysis, the best encapsulation has been successfully demonstrated by growing LPCVD silicon nitride of thickness 0.9¿m. Accomplishing this feat enables electrostatically actuated diaphragm chamber to be developed and in particular, will spur advancement in the development of a CMOS-compatible electrostatically actuated diaphragm micropump.