A novel EWOD digital microfluidic device using P(VDF-TrFE)

Author

Zhao, Pingan ; Li, Yinqing ; Zhou, Jia ; Liu, Ran ; Huang, Yiping ; Xie, Haifen ; Xu, Haisheng

Author_Institution

Dept. of Microelectron., Fudan Univ., Shanghai, China

fYear

2008

fDate

20-23 Oct. 2008

Firstpage

2504

Lastpage

2507

Abstract

A novel digital microfluidic device using the high dielectric constant material P(VDF-TrFE) (poly-vinylidene fluoride-trifluoroethylene) as the dielectric layer fabricated by spin-coating process is proposed. The device is featured with the advantages of both low driving voltage and IC compatible process. The dielectric constant of P(VDF-TrFE) is measured as high as 11.6. The contact angle between the liquid droplet and the device changes from 118Â° to 75Â° under an applied voltage of 30 V. A droplet of 3Â¿L PBS (phosphate buffered saline) has been successfully driven reciprocatively on the planar surface under an operating voltage of 20 V.

Keywords

microfluidics; organic compounds; permittivity; spin coating; wetting; EWOD digital microfluidic device; P(VDF-TrFE); electrowetting on dielectric; high dielectric constant material; integrated circuit compatible process; phosphate buffered saline; planar surface; poly-vinylidene fluoride-trifluoroethylene; spin-coating process; voltage 20 V; Application specific integrated circuits; Dielectric constant; Dielectric materials; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Low voltage; Microelectronics; Microfluidics; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on

Conference_Location

Beijing

Print_ISBN

978-1-4244-2185-5

Electronic_ISBN

978-1-4244-2186-2

Type

conf

DOI

10.1109/ICSICT.2008.4735080

Filename

4735080