Title :
A novel EWOD digital microfluidic device using P(VDF-TrFE)
Author :
Zhao, Pingan ; Li, Yinqing ; Zhou, Jia ; Liu, Ran ; Huang, Yiping ; Xie, Haifen ; Xu, Haisheng
Author_Institution :
Dept. of Microelectron., Fudan Univ., Shanghai, China
Abstract :
A novel digital microfluidic device using the high dielectric constant material P(VDF-TrFE) (poly-vinylidene fluoride-trifluoroethylene) as the dielectric layer fabricated by spin-coating process is proposed. The device is featured with the advantages of both low driving voltage and IC compatible process. The dielectric constant of P(VDF-TrFE) is measured as high as 11.6. The contact angle between the liquid droplet and the device changes from 118° to 75° under an applied voltage of 30 V. A droplet of 3¿L PBS (phosphate buffered saline) has been successfully driven reciprocatively on the planar surface under an operating voltage of 20 V.
Keywords :
microfluidics; organic compounds; permittivity; spin coating; wetting; EWOD digital microfluidic device; P(VDF-TrFE); electrowetting on dielectric; high dielectric constant material; integrated circuit compatible process; phosphate buffered saline; planar surface; poly-vinylidene fluoride-trifluoroethylene; spin-coating process; voltage 20 V; Application specific integrated circuits; Dielectric constant; Dielectric materials; Dielectric measurements; High K dielectric materials; High-K gate dielectrics; Low voltage; Microelectronics; Microfluidics; Solids;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
DOI :
10.1109/ICSICT.2008.4735080
