5.9 ps/gate operation with 0.1 mu m gate-length GaAs MESFET´s

Author

Yamane, Y. ; Enoki, T. ; Sugitani, S. ; Hirayama, M.

Author_Institution

Electr. Commun. Lab., NTT, Kanagawa, Japan

fYear

1988

fDate

11-14 Dec. 1988

Firstpage

894

Lastpage

896

Abstract

Ring oscillator operation utilizing 0.1- mu m-gate-length GaAs MESFETs with 90-GHz cutoff frequency is reported. This performance was obtained through SAINT (self-aligned implantation for n/sup +/-layer technology), using low-energy ion implantation, rapid thermal annealing, and photolithography. MESFET I-V characteristic with 10- mu m gate width are shown. Transconductance and threshold voltage are 500 mS/mm and -0.44 V, respectively. A 23-stage ring oscillator was fabricated. Propagation delay was 5.9 ps/gate with 31.2-mW/gate powder dissipation at room temperature.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated logic circuits; ion implantation; solid-state microwave devices; -0.44 V; 0.1 micron; 31.2 mW; 5.9 ps; 500 mS; 90 GHz; GaAs; I-V characteristic; III-V semiconductors; MESFETs; RTA; SAINT; cutoff frequency; high speed digital circuits; logic IC; low-energy ion implantation; n/sup +/-layer technology; photolithography; powder dissipation; propagation delay; rapid thermal annealing; ring oscillator; self-aligned implantation; submicron gate length; threshold voltage; Cutoff frequency; Gallium arsenide; Ion implantation; Lithography; MESFETs; Propagation delay; Rapid thermal annealing; Ring oscillators; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1988. IEDM '88. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Type

conf

DOI

10.1109/IEDM.1988.32956

Filename

32956