Observation of Blue Light Emission from Si Ion Implated Fused Silica Substrates

Author

Miura, Kenta ; Tanemura, Takeshi ; Hanaizumi, Osamu ; Yamamoto, Shun Ya ; Takano, Kyoya ; Sugimoto, Masaki ; Yoshikawa, Masahito

Author_Institution

Gunma Univ., Kiryu

fYear

2007

fDate

17-22 June 2007

Firstpage

1

Lastpage

1

Abstract

In this paper, Si ions are implanted into fused silica substrates, and the samples are annealed at 1100, 1150, and 1200degC. We demonstrate that blue photoluminescence (PL) spectra having peak wavelengths around 400 nm are generated from the samples in addition to the PL spectrum whose wavelength ranges from red to infrared. The longer-wavelength peak is reduced and only the blue PL peaks are observed from the samples after annealing above 1150degC.

Keywords

annealing; elemental semiconductors; ion implantation; photoluminescence; silicon; SiO₂:Si; annealing; blue light emission; fused silica substrates; ion implantation; photoluminescence spectra; temperature 1100 C; temperature 1150 C; temperature 1200 C; Annealing; Atom optics; Atomic beams; Atomic measurements; Optical films; Particle beam optics; Power engineering and energy; Silicon compounds; Stimulated emission; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-0931-0

Electronic_ISBN

978-1-4244-0931-0

Type

conf

DOI

10.1109/CLEOE-IQEC.2007.4386222

Filename

4386222