A power sensor with 80ns response time for power management in microprocessors

Author

Bhagavatula, Srikar ; Byunghoo Jung

Author_Institution

Electr. & Comput. Eng., Purdue Univ., West Lafayette, CA, USA

fYear

2013

fDate

22-25 Sept. 2013

Firstpage

1

Lastpage

4

Abstract

A real-time, on-chip power sensor that estimates load currents and on-chip temperatures concurrently is presented. It occupies an area of 0.01mm² in 0.13μm CMOS technology. With a simplified 1-point calibration and a response time of 80ns, it shows improvements in input dynamic range by 10×, response time by 6× and sensitivity by 3× over previous such sensors. A current reference with a measured temperature coefficient 91ppm/°C (-20°C to 120°C) is presented. This reference is used for online calibration of the power sensor to enable greater tolerance to PVT variations and aging effects.

Keywords

CMOS integrated circuits; calibration; microprocessor chips; temperature sensors; 1-point calibration; CMOS technology; PVT variations; aging effects; input dynamic range; load currents; microprocessors; on-chip temperatures; online calibration; power management; real-time on-chip power sensor; response time; size 0.13 mum; temperature -20 C to 120 C; temperature coefficient; time 80 ns; Calibration; Current measurement; Dynamic range; System-on-chip; Temperature measurement; Temperature sensors; Time factors;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference (CICC), 2013 IEEE

Conference_Location

San Jose, CA

Type

conf

DOI

10.1109/CICC.2013.6658487

Filename

6658487