Design of an E-band high power amplifier for wireless high data rate communications

Author

Asadi, Shahrooz ; Yagoub, Mustapha C E

Author_Institution

SITE, Ottawa Univ., Ottawa, ON

fYear

2009

fDate

3-6 May 2009

Firstpage

63

Lastpage

66

Abstract

In this paper, a fully integrated E-band power amplifier with 17 dB gain, 11.5 dBm saturated output power, and 5 GHz bandwidth was achieved in the 90 nm CMOS technology. The amplifier configuration consists of two cascode stages and a common-source output stage. It exhibits a peak power added-efficiency of 20% while consuming 50 mW from a 1.5 V power supply.

Keywords

CMOS integrated circuits; field effect MIMIC; integrated circuit design; low-power electronics; millimetre wave power amplifiers; nanoelectronics; CMOS technology; cascode amplifier configuration; common-source output stage; efficiency 20 percent; gain 17 dB; integrated E-band high-power amplifier design; power 50 mW; power consumption; size 90 nm; voltage 1.5 V; wireless high-data rate communications; CMOS technology; Circuit simulation; Current density; Frequency; High power amplifiers; Inductors; MOSFETs; Millimeter wave technology; Power amplifiers; Power generation; CMOS; E-band; Power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2009. CCECE '09. Canadian Conference on

Conference_Location

St. John´s, NL

ISSN

0840-7789

Print_ISBN

978-1-4244-3509-8

Electronic_ISBN

0840-7789

Type

conf

DOI

10.1109/CCECE.2009.5090093

Filename

5090093