DocumentCode
2156947
Title
Local floating body effect in body-grounded SOI nMOSFETs
Author
Tseng, Y.-C. ; Huang, W.M. ; Ikegami, B. ; Diaz, D.C. ; Ford, J.M. ; Woo, J.C.S.
Author_Institution
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
fYear
1997
fDate
6-9 Oct 1997
Firstpage
26
Lastpage
27
Abstract
Summary form only given. In this paper, the width dependence of the kink effect and the low frequency noise overshoot in the body grounded H-gate SOI MOSFETs have been studied. These phenomena are related to the local floating body effects resulting from the intrinsic body impedance. Also, it is suggested that the unique low frequency noise overshoot in SOI can be a sensitive tool to evaluate the efficiency of the body contact
Keywords
MOSFET; semiconductor device noise; silicon-on-insulator; H-gate SOI MOSFETs; LF noise; NMOSFET; Si; body-grounded SOI n-MOSFETs; intrinsic body impedance; kink effect; local floating body effect; low frequency noise overshoot; n-channel MOSFET; width dependence; 1f noise; Circuits; Immune system; Impedance; Laboratories; Low-frequency noise; MOSFETs; RF signals; Radio frequency; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location
Fish Camp, CA
ISSN
1078-621X
Print_ISBN
0-7803-3938-X
Type
conf
DOI
10.1109/SOI.1997.634915
Filename
634915
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