Title :
Local floating body effect in body-grounded SOI nMOSFETs
Author :
Tseng, Y.-C. ; Huang, W.M. ; Ikegami, B. ; Diaz, D.C. ; Ford, J.M. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
Summary form only given. In this paper, the width dependence of the kink effect and the low frequency noise overshoot in the body grounded H-gate SOI MOSFETs have been studied. These phenomena are related to the local floating body effects resulting from the intrinsic body impedance. Also, it is suggested that the unique low frequency noise overshoot in SOI can be a sensitive tool to evaluate the efficiency of the body contact
Keywords :
MOSFET; semiconductor device noise; silicon-on-insulator; H-gate SOI MOSFETs; LF noise; NMOSFET; Si; body-grounded SOI n-MOSFETs; intrinsic body impedance; kink effect; local floating body effect; low frequency noise overshoot; n-channel MOSFET; width dependence; 1f noise; Circuits; Immune system; Impedance; Laboratories; Low-frequency noise; MOSFETs; RF signals; Radio frequency; Voltage;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634915
