• DocumentCode
    2156958
  • Title

    Quasi-3D method: Time-efficient TCAD and mixed-mode simulations on finFET technologies

  • Author

    Hellings, Geert ; Shih-Hung Chen ; Linten, D. ; Sholz, Mirko ; Groeseneken, Guido

  • Author_Institution
    imec, Leuven, Belgium
  • fYear
    2013
  • fDate
    22-25 Sept. 2013
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The Quasi-3D allows to drastically speed up TCAD and mixed-mode simulations of finFET technologies, by solving on well-chosen 2D finFET cross sections. The method accurately reproduces important transistor metrics requiring only 1/20th of the simulation time.
  • Keywords
    MOSFET; technology CAD (electronics); 2D finFET crosssection; finFET technology; mixed-mode simulation; quasi-3D method; time-efficient TCAD; transistor metrics; Electrostatic discharges; FinFETs; Integrated circuit modeling; Logic gates; Silicon; Solid modeling; Three-dimensional displays; 3D simulations; Mixed-Mode simulations; Modeling; TCAD; bulk finFET;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference (CICC), 2013 IEEE
  • Conference_Location
    San Jose, CA
  • Type

    conf

  • DOI
    10.1109/CICC.2013.6658493
  • Filename
    6658493
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2156958