DocumentCode
2157052
Title
Characterizations of single gate and multi-finger gate of ISFET for pH sensor applications
Author
Rani, Rozina Abdul ; Syono, Mohd Ismahadi ; Ramli, Asma Sahirah
Author_Institution
Microfluidics & BioMEMS, MIMOS Berhad, Kuala Lumpur, Malaysia
fYear
2008
fDate
20-23 Oct. 2008
Firstpage
2577
Lastpage
2580
Abstract
This paper discuss the characterization and the performance of two types of ISFET, which have different gate design. Isfet5 has single gate while Isfet7 has multi-finger gate. The characterization of ISFET is analyzed from the IdVd and IdVg curve, and by measuring the threshold voltage, Vth and response-time of ISFET in order to determine the sensitivity of ISFET. Beside, the hysteresis of ISFET is also measured during the experiment. The Vth value extracted from IdVg curve shows that Isfet7 has higher sensitivity compared to Isfet5. While from the response-time, Isfet5 has better sensitivity than Isfet7. In term of hysteresis effect, Isfet7 has less effect of hysteresis compared to Isfet5. However, from the correlation between sensitivity and pH value graph, based on Vth value and response-time, both graphs conclude that Isfet5 has more linear profile with regression value, R2 more than 0.9960.
Keywords
chemical sensors; hysteresis; ion sensitive field effect transistors; pH measurement; ISFET; hysteresis effect; multi-finger gate; pH sensor; response-time; Biomedical measurements; Biosensors; CMOS technology; Epoxy resins; Fabrication; Hysteresis; Intelligent sensors; Packaging; Sensor phenomena and characterization; Sensor systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location
Beijing
Print_ISBN
978-1-4244-2185-5
Electronic_ISBN
978-1-4244-2186-2
Type
conf
DOI
10.1109/ICSICT.2008.4735099
Filename
4735099
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