• DocumentCode
    2157087
  • Title

    High-efficiency light-emission from novel GaAs deep-centers for high-speed 1.5 μm fiber-optics

  • Author

    Pan, Janet L.

  • Author_Institution
    Yale Univ., New Haven
  • fYear
    2007
  • fDate
    17-22 June 2007
  • Firstpage
    1
  • Lastpage
    1
  • Abstract
    We demonstrate the first LEDs at 1.3-1.5 μm using GaAs deep-centers having higher (90%) efficiencies and larger Einstein B-coefficients than bulk InGaAs. An observed absence of deep-center self-absorption (Franck-Condon shift) could make possible near-zero threshold lasers.
  • Keywords
    gallium arsenide; high-speed optical techniques; laser beams; light emitting diodes; optical fibres; semiconductor lasers; Einstein B-coefficients; Franck-Condon shift; GaAs; deep-center self-absorption; high-efficiency light-emission; high-speed fiber-optics; near-zero threshold lasers; wavelength 1.3 μm to 1.5 μm; Absorption; Fiber lasers; Gallium arsenide; III-V semiconductor materials; Indium gallium arsenide; Laser transitions; Luminescence; Material properties; Self-assembly; Semiconductor lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
  • Conference_Location
    Munich
  • Print_ISBN
    978-1-4244-0930-3
  • Electronic_ISBN
    978-1-4244-0931-0
  • Type

    conf

  • DOI
    10.1109/CLEOE-IQEC.2007.4386235
  • Filename
    4386235