DocumentCode :
2157486
Title :
Using innovation to drive Moore’s Law
Author :
Bohr, Mark
Author_Institution :
Intel Corp., Hillsboro, OR, USA
fYear :
2008
fDate :
20-23 Oct. 2008
Firstpage :
13
Lastpage :
15
Abstract :
MOSFET scaling has served our industry well for several decades by providing significant improvements in performance, density and power, but traditional MOSFET scaling has run into hard roadblocks. Interconnect and patterning technologies have also run into significant limitations when trying to follow traditional scaling methods. The past few years have seen the introduction of new materials and device structures in integrated circuits that have kept us on the path of Moore´s Law. These types of innovations will be increasingly important as we continue to scale.
Keywords :
MOS integrated circuits; MOSFET; integrated circuit interconnections; monolithic integrated circuits; MOSFET scaling; Moore´s Law; integrated circuits; interconnect; patterning; Integrated circuit interconnections; Integrated circuit technology; MOSFET circuits; Microprocessors; Moore´s Law; Power MOSFET; Silicon; Technological innovation; Tensile strain; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
Electronic_ISBN :
978-1-4244-2186-2
Type :
conf
DOI :
10.1109/ICSICT.2008.4735115
Filename :
4735115
Link To Document :
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