DocumentCode :
2157489
Title :
Low power ARM® Cortex™-M0 CPU and SRAM using Deeply Depleted Channel (DDC) transistors with Vdd scaling and body bias
Author :
Agrawal, Vishal ; Kepler, N. ; Kidd, David ; Krishnan, Girish ; Leshner, Sam ; Bakishev, T. ; Zhao, Dongbin ; Ranade, P. ; Roy, Ranjit ; Wojko, M. ; Clark, Leon ; Rogenmoser, R. ; Hori, Muneo ; Ema, T. ; Moriwaki, S. ; Tsuruta, T. ; Yamada, Tomoaki ; Mita
Author_Institution :
SuVolta Inc., Los Gatos, CA, USA
fYear :
2013
fDate :
22-25 Sept. 2013
Firstpage :
1
Lastpage :
4
Abstract :
An SoC with ARM® Cortex™-M0 CPU cores and SRAMs is implemented in both 65nm baseline and Deeply Depleted Channel™ (DDC) technologies. DDC technology demonstrates more than 50% active and static power reduction for the CPU cores at matched 350 MHz speed via VDD scaling and body biasing. Alternatively DDC technology demonstrates 35% speed increase at matched power. The results hold across process corners and temperature with appropriate body bias selection. DDC technology also increases SRAM static noise margin (SNM) reduces 8Mb VDDmin by 150 mV reduces SRAM active leakage by 50% while maintaining Iread and reduces SRAM retention leakage by 5x.
Keywords :
SRAM chips; low-power electronics; microprocessor chips; system-on-chip; transistors; DDC transistor; SRAM; SoC; VDD scaling; active power reduction; body biasing; deeply depleted channel; frequency 350 MHz; low power ARM cortex-M0 CPU; retention leakage; static noise margin; static power reduction; voltage 150 mV; Central Processing Unit; Noise; Random access memory; Silicon; System-on-chip; Transistors; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2013 IEEE
Conference_Location :
San Jose, CA
Type :
conf
DOI :
10.1109/CICC.2013.6658514
Filename :
6658514
Link To Document :
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