Abstract :
The following topics were dealt with: advanced CMOS devices; RF devices; analog devices; mobility enhancement technology; S/D engineered nanoCMOS devices; power devices; reliability; device modelling; nanodevice simulation; parameter extraction; nanoelectronics; quantum devices; SOI materials; thin film technology; silicon materials; advanced memory technology; RRAM; PCM; nanocrystal nonvolatile memory; photonic and display technology; compound semiconductor devices and materials; advanced CMOS logic technology; heterogeneous integrated circuit; 3D integration; packaging technology; advanced interconnect technology; gate stack technology; advanced process technology; MMIC; RF front end design; RF transmitter; RF transreceiver; RF IC design; analog signal IC; mixed signal IC; SoC related technology; digital IC and system; IC testing; EDA technology; MEMS technology; biosensors; and chemical sensors.
Keywords :
CMOS integrated circuits; MMIC; analogue integrated circuits; biosensors; chemical sensors; digital integrated circuits; display devices; integrated circuit design; integrated circuit interconnections; integrated circuit testing; integrated optics; micromechanical devices; mixed analogue-digital integrated circuits; nanoelectronics; packaging; power electronics; pulse code modulation; quantum interference devices; radiofrequency integrated circuits; random-access storage; reliability; semiconductor device models; semiconductor devices; semiconductor materials; silicon; silicon-on-insulator; system-on-chip; thin films; transceivers; 3D integration; EDA technology; IC testing; MEMS technology; MMIC; PCM; RF IC design; RF devices; RF front end design; RF transmitter; RF transreceiver; RRAM; SOI materials; SoC related technology; advanced CMOS devices; advanced interconnect technology; advanced memory technology; advanced process technology; analog devices; analog signal IC; biosensors; chemical sensors; compound semiconductor devices; compound semiconductor materials; device modelling; digital IC; display technology; gate stack technology; heterogeneous integrated circuit; mixed signal IC; mobility enhancement technology; nanoCMOS devices; nanocrystal nonvolatile memory; nanodevice simulation; nanoelectronics; packaging technology; parameter extraction; photonics; power devices; quantum devices; reliability; silicon materials; thin film technology;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2008. ICSICT 2008. 9th International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-2185-5
DOI :
10.1109/ICSICT.2008.4735120
