Title :
45pW ESD clamp circuit for ultra-low power applications
Author :
Yen-Po Chen ; Yoonmyung Lee ; Jae-Yoon Sim ; Alioto, Massimo ; Blaauw, D. ; Sylvester, Dennis
Author_Institution :
Univ. of Michigan, Ann Arbor, MI, USA
Abstract :
Novel ultra low-leakage ESD power clamp designs for wireless sensor applications are proposed and implemented in 0.18μm CMOS. Using new biasing structures to limit both subthreshold leakage and GIDL, the proposed designs consume as little as 43pW at 25 C and 119nW at 125 C with 4500V HBM level and 400V MM level protection, marking an 18-139× leakage reduction over conventional ESD clamps.
Keywords :
CMOS integrated circuits; electrostatic discharge; low-power electronics; wireless sensor networks; power 119 nW; power 43 pW; power 45 pW; size 0.18 mum; temperature 125 C; temperature 25 C; voltage 400 V; voltage 4500 V; Clamps; Electrostatic discharges; Leakage currents; Standards; Subthreshold current; Temperature measurement; Transistors;
Conference_Titel :
Custom Integrated Circuits Conference (CICC), 2013 IEEE
Conference_Location :
San Jose, CA
DOI :
10.1109/CICC.2013.6658522
