DocumentCode
2157716
Title
Power Characteristics of High Voltage LDMOS Transistors
Author
Gebara, Edward ; Rorsman, Niklas ; Olsson, Jörgen ; Zirath, Herbert ; Eklund, Klas-Håkan ; Laskar, Joy
Author_Institution
Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, USA.
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
4
Abstract
A lateral double diffused DMOS (LDMOS) transistor has been integrated into a CMOS process. An effective RESURF of the drain drift region enables a high breakdown voltage of about 90V and GHz operation. The measured output power density is 1.4W/mm at 1GHz for a supply voltage of 70V. A power added efficiency (PAE) of 51% and an output power density of 1.2W/mm was obtained at 50V.
Keywords
Breakdown voltage; CMOS technology; Doping; Electric breakdown; Frequency; Linearity; Microwave transistors; Power engineering and energy; Power engineering computing; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338859
Filename
4139872
Link To Document