DocumentCode
2158266
Title
Effect of gain expansion on power HBTs
Author
Hirayama, Tomohisa ; Suzuki, Yasuyuki ; Matsuno, Noriaki ; Hida, Hikaru
Author_Institution
Photonic and Wireless Devices Research Labs., System Devices and Fundamental Research, NEC Corporation, 34 Miyukigaoka, Tsukuba, Ibaraki 305-8501, Japan. Phone: +81-298-50-1171 Fax: +81-298-50-1108 E-mail: t-hirayama@cj.jp.nec.com
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
4
Abstract
This paper describes the effect of gain expansion on power heterojunction bipolar transistors (HBTs). Gain expansion improves the power-added efficiency of power amplifiers in the high-input-power region under the CDMA criteria because the gain expansion compensates for the gain compression in the high-input-power region. RF simulation showed that the gain expansion of HBTs is caused by increased maximum stable gain in the low-collector-current region. Class-B operation was found to enhance gain expansion due to the transconductance drastically increasing with the collector current in the class-B operation region.
Keywords
Current density; Distortion measurement; Gain measurement; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338881
Filename
4139894
Link To Document