Title :
RF low-noise amplifiers
Author :
Carreto-Castro, M.F. ; Silva-Martinez, J.
Author_Institution :
Integrated Circuits Design Group, Nat. Inst. of Astrophys. Opt. & Electron., Puebla, Mexico
fDate :
31 May-3 Jun 1998
Abstract :
In this paper two Low-Noise Amplifiers (LNA) are presented. The first topology is a two-stage LNA that is ac coupled to the mixer, while the second one is a single stage LNA that can be dc coupled to the mixer. These circuits have small sensitivity to temperature variations and special biasing techniques allow us to reduce the effects of the process tolerances. Preliminary experimental results obtained from prototype, not properly packaged for high frequency applications, have shown that the proposed technique works properly up to 250 MHz. These circuits have been fabricated in an 8-GHz 1.2 μm BiCMOS technology
Keywords :
BiCMOS analogue integrated circuits; radiofrequency amplifiers; 1.2 micron; 250 MHz; AC coupling; BiCMOS technology; DC coupling; RF low-noise amplifier; active inductor; biasing; circuit topology; high frequency application; mixer; process tolerance; single stage LNA; temperature sensitivity; two-stage LNA; Active inductors; Circuit topology; Coupling circuits; Equivalent circuits; Inductance; Low-noise amplifiers; Noise figure; Radio frequency; Silicon; Temperature sensors;
Conference_Titel :
Circuits and Systems, 1998. ISCAS '98. Proceedings of the 1998 IEEE International Symposium on
Conference_Location :
Monterey, CA
Print_ISBN :
0-7803-4455-3
DOI :
10.1109/ISCAS.1998.706846
