Title :
A 4.7 GHz 4.4mW SiGe Dual-Modulus Prescaler
Author :
Ritzberger, Gunter ; Meister, Thomas F. ; Knapp, Herbert ; Aufinger, Klaus ; Boguth, Sabine ; Treitinger, Ludwig
Author_Institution :
Infineon Technologies AG, Corporate Research, Otto-Hahn-Ring 6, D-81730 Munich, Germany, Tel.: +49 89 234-43839, Fax.: +49 89 234-47069; Institute of Communications and Radio-Frequency Engineering, Vienna University of Technology, Gusshausstrasse 25, A-10
Abstract :
This paper presents a static dual-modulus prescaler as needed for mobile communications with division ratios of 128 and 129. It is manufactured in a 0.5 ¿m 80GHz-fT SiGe bipolar technology. The circuit is optimized for low power consumption and operates up to 4.7 GHz, consuming 4.4mW from a 2.3V supply inclusive driving a capacitive load of 8 pF.
Keywords :
Circuits; Energy consumption; Flip-flops; Frequency conversion; Germanium silicon alloys; Master-slave; Mobile communication; Phase locked loops; Silicon germanium; Voltage;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338888
