Title :
New paradigm of predictive MOSFET and interconnect modeling for early circuit simulation
Author :
Cao, Yu ; Sato, Takashi ; Orshansky, Michael ; Sylvester, Dennis ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A new paradigm of predictive MOSFET and interconnect modeling is introduced. This approach is developed to specifically address SPICE compatible parameters for future technology generations. For a given technology node, designers can use default values or directly input L eff, Tok, Vt, Rdsw and interconnect dimensions to instantly obtain a BSIM3v3 customized model for early stages of circuit design and research. Models for 0.18 μm and 0.13 μm technology nodes with Leff down to 70 nm are currently available on the web. Comparisons with published data and 2D simulations are used to verify this predictive technology model
Keywords :
CMOS integrated circuits; MOS integrated circuits; MOSFET; SPICE; circuit simulation; integrated circuit interconnections; integrated circuit modelling; semiconductor device models; 0.13 micron; 0.18 micron; 70 nm; BSIM3v3 customized model; SPICE compatible parameters; early circuit simulation; predictive MOSFET modeling; predictive interconnect modeling; predictive technology model; Capacitance; Circuit simulation; Circuit synthesis; Computational modeling; Computer simulation; Integrated circuit interconnections; Integrated circuit modeling; MOSFET circuits; Predictive models; SPICE;
Conference_Titel :
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5809-0
DOI :
10.1109/CICC.2000.852648
