Title :
Field enhancement due to surface structuring during aluminum induced crystallization of amorphous silicon
Author :
Burford, Nathan ; El-Shenawee, Magda ; Shumate, Seth ; Hutchings, Douglas ; Naseem, Hameed
Author_Institution :
Electr. Eng. Dept., Univ. of Arkansas, Fayetteville, AR, USA
Abstract :
Aluminum induced crystallization (AIC) of amorphous silicon (a-Si) may potentially be causing the formation of plasmonic nanostructures on the silicon surface. Field enhancement within the silicon layer will be quantified in order to develop an understanding of the observed enhancement. Computer simulations using HFSS are presented here. The electric fields absorbed inside the silicon are obtained as a function of the incident wavelength due to irregular nanostructures of aluminum patches to simulate the induced aluminum-silicon patches.
Keywords :
aluminium; amorphous semiconductors; crystallisation; elemental semiconductors; nanostructured materials; plasmonics; silicon; surface structure; Al; Si; aluminum induced crystallization; amorphous silicon; computer simulations; field enhancement; irregular nanostructures; plasmonic nanostructures; surface structuring; Aluminum; Amorphous silicon; Crystallization; Nanostructures; Optical surface waves; Plasmons;
Conference_Titel :
Antennas and Propagation Society International Symposium (APSURSI), 2012 IEEE
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4673-0461-0
DOI :
10.1109/APS.2012.6349213
