Title :
Silicon Carbide amplifiers for communication applications
Author :
Temcamani, Farid ; Pouvil, Pierre ; Noblanc, Olivier ; Brylinski, Christian ; Darges, Bernard ; Villard, Frédéric ; Prigent, Jean-Paul
Author_Institution :
ENSEA-EMO, 95014 Cergy-Pontoise Cedex, France
Abstract :
Thomson Silicon Carbide MESFET was characterised in DC, small signal and load-pull conditions. Several amplifiers were designed to be used in communication systems (digital television, DAB) and were measured. A comparison with a LDMOS amplifier showed that SiC is a very promising material for microwave and RF power amplification.
Keywords :
Breakdown voltage; Communication systems; MESFETs; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers; Silicon carbide; Substrates; Thermal conductivity;
Conference_Titel :
Microwave Conference, 2000. 30th European
Conference_Location :
Paris, France
DOI :
10.1109/EUMA.2000.338893
