• DocumentCode
    2158683
  • Title

    On understanding the enhancement of optical absorption in nanostructure photovoltaic solar cells

  • Author

    Brockett, Timothy ; Rajagopalan, Harish ; Rahmat-Samii, Yahya

  • Author_Institution
    Electr. Eng. Dept., Univ. of California, Los Angeles, Los Angeles, CA, USA
  • fYear
    2012
  • fDate
    8-14 July 2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Understanding the enhancement of optical absorption in nanostructure photovoltaic (PV) solar cells, specifically GaAs core-shell nanopillar arrays, is accomplished through the full-wave electromagnetic characterization of the optical electric fields. Inherent advantageous electromagnetic properties of reduced reflection, increased absorption, and angle of incidence independence can be understood through the absorption mechanism that is a function of the interaction of the incident electric field with the nanopillar structure, materials, and configuration. The role of nanopillar structure versus the role of the nanopillar materials in optical absorption will be revealed by comparing nanopillars using purely perfectly electric conducting (PEC) materials with that of nanopillars using semiconductor material. Also, further development of nanopillar design will be suggested from an absorption aspect.
  • Keywords
    III-V semiconductors; conducting materials; electric fields; gallium arsenide; light absorption; nanostructured materials; solar cell arrays; GaAs; PEC material; PV solar cell; angle of incidence independence; core-shell nanopillar array structure material; full-wave electromagnetic property characterization; nanostructure photovoltaic solar cell; optical absorption enhancement; optical electric field; perfectly electric conducting material; semiconductor material; Absorption; Materials; Optical imaging; Optical reflection; Photovoltaic cells; Photovoltaic systems;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Antennas and Propagation Society International Symposium (APSURSI), 2012 IEEE
  • Conference_Location
    Chicago, IL
  • ISSN
    1522-3965
  • Print_ISBN
    978-1-4673-0461-0
  • Type

    conf

  • DOI
    10.1109/APS.2012.6349216
  • Filename
    6349216