DocumentCode :
2158720
Title :
Electrically tunable and temperature compensated FBAR
Author :
Pang, Wei ; Yu, Hongyu ; Zhang, Hao ; Kim, Eun Sok
fYear :
2005
fDate :
12-17 June 2005
Abstract :
This paper describes the design, fabrication and of an electrically tunable, temperature compensated film bulk acoustic resonator (FBAR) that is formed by integrating FBAR with an electrostatic MEMS actuator. About 0.9% tuning (Δf ≅26 MHz) of the series resonant frequency at 2.8 GHz has been obtained with less than 10 V. This is the highest frequency tuning reported for FBAR operating above 1GHz without any extra power consumption. Moreover, the air-gap capacitor (that forms the MEMS actuator) passively reduces the FBAR´s temperature coefficient of frequency (TCF) by about 40 ppm/°C.
Keywords :
acoustic resonators; bulk acoustic wave devices; capacitors; compensation; electrostatic actuators; tuning; 2.8 GHz; air-gap capacitor; electrical tuning; electrostatic MEMS actuator; film bulk acoustic resonators; series resonant frequency; surface micromachined tunable capacitor; temperature coefficient of frequency; temperature compensation; Air gaps; Capacitors; Electrostatic actuators; Energy consumption; Fabrication; Film bulk acoustic resonators; Micromechanical devices; Resonant frequency; Temperature; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 2005 IEEE MTT-S International
ISSN :
01490-645X
Print_ISBN :
0-7803-8845-3
Type :
conf
DOI :
10.1109/MWSYM.2005.1516911
Filename :
1516911
Link To Document :
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