Title :
A broadband 10 GHz track-and-hold in Si/SiGe HBT technology
Author :
Jensen, Jonathan C. ; Larson, Lawrence E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA
Abstract :
This paper presents a track-and-hold amplifier for sub-sampling communications applications based on a diode bridge design with high-speed Schottky diodes. Implemented in a 45 GHz BiCMOS Si/SiGe process, this IC consumes approximately 550 mW and can accommodate input voltages up to 600 mV. It has an IIP3 of 25.7 dBm with an input bandwidth in excess of 10 GHz
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; bridge circuits; elemental semiconductors; sample and hold circuits; semiconductor materials; silicon; wideband amplifiers; 10 GHz; 45 GHz; 550 mW; BiCMOS; HBT technology; IIP3; broadband track-and-hold amplifier; diode bridge design; high-speed Schottky diodes; input bandwidth; input voltages; sub-sampling communications; Bandwidth; BiCMOS integrated circuits; Bridge circuits; Capacitors; Germanium silicon alloys; Heterojunction bipolar transistors; Sampling methods; Schottky diodes; Silicon germanium; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5809-0
DOI :
10.1109/CICC.2000.852658
