Modeling of the piezoresistance effect nonlinearity in p-Si

In this paper numerical modeling of the piezoresistance (PR) effect nonlinearity in bulk p-Si, which takes into account the main scattering mechanisms and peculiarities of the three-band spectrum model, and modeling of piezoresistors with variable doping impurity concentration is considered. The choice of the model parameters have originated from the agreement between calculated and experimental data for linear piezoresistance effect and mobility in bulk p-Si. Agreement between calculated and obtained from experiment PR coefficients allows considering PR effect nonlinearity in p-Si and Ge_xSi_1-x within the limits of the model.