DocumentCode
2158986
Title
SRAM embedded memory with low cost, flash EEPROM-switch-controlled redundancy
Author
McPartland, R.J. ; Loeper, D.J. ; Higgins, F.P. ; Singh, R. ; MacDonald, G. ; Komoriya, G. ; Aymeloglu, S. ; Depaolis, M.V. ; Leung, C.W.
Author_Institution
Lucent Technol. Bell Labs., Allentown, PA, USA
fYear
2000
fDate
2000
Firstpage
287
Lastpage
289
Abstract
This paper describes the use of low cost, flash EEPROM switches to control redundancy in SRAM embedded memories. Flash cell design, operation and process technology are described. A 768K-bit embedded SRAM memory with flash controlled column redundancy and built in self-repair is presented
Keywords
SRAM chips; built-in self test; cellular arrays; embedded systems; flash memories; redundancy; 768 Kbit; SRAM embedded memory; built in self-repair; flash EEPROM-switch-controlled redundancy; flash cell design; flash controlled column redundancy; process technology; Application specific integrated circuits; Capacitors; Circuit faults; Costs; Latches; Multiplexing; Random access memory; Shift registers; Switches; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location
Orlando, FL
Print_ISBN
0-7803-5809-0
Type
conf
DOI
10.1109/CICC.2000.852668
Filename
852668
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