Title :
SRAM embedded memory with low cost, flash EEPROM-switch-controlled redundancy
Author :
McPartland, R.J. ; Loeper, D.J. ; Higgins, F.P. ; Singh, R. ; MacDonald, G. ; Komoriya, G. ; Aymeloglu, S. ; Depaolis, M.V. ; Leung, C.W.
Author_Institution :
Lucent Technol. Bell Labs., Allentown, PA, USA
Abstract :
This paper describes the use of low cost, flash EEPROM switches to control redundancy in SRAM embedded memories. Flash cell design, operation and process technology are described. A 768K-bit embedded SRAM memory with flash controlled column redundancy and built in self-repair is presented
Keywords :
SRAM chips; built-in self test; cellular arrays; embedded systems; flash memories; redundancy; 768 Kbit; SRAM embedded memory; built in self-repair; flash EEPROM-switch-controlled redundancy; flash cell design; flash controlled column redundancy; process technology; Application specific integrated circuits; Capacitors; Circuit faults; Costs; Latches; Multiplexing; Random access memory; Shift registers; Switches; Tunneling;
Conference_Titel :
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5809-0
DOI :
10.1109/CICC.2000.852668
