Title :
Embedded DRAM: an element and circuit evaluation
Author :
Diodato, P.W. ; O´Neil, J.H. ; Wong, Y.-H. ; Alers, G.B. ; Vaidya, H.M. ; Chaudhry, S. ; Lindenberger, W.S. ; Dumbri, A.C. ; Liu, C.T. ; Lai, W.Y.C.
Author_Institution :
Lucent Technol. Bell Labs., Murray Hill, NJ, USA
Abstract :
Embedded DRAM memory cells employing advanced capacitor dielectrics (Ta2O5) have been designed, fabricated, and measured. Memory cell data retention time is used to compare capacitor characteristics between four Ta2O5 equipment vendors. Static behavior in one type of DRAM cell is attributed to the bimodal current-voltage characteristic of the Ta2 O5, and circuit topography
Keywords :
DRAM chips; application specific integrated circuits; capacitors; cellular arrays; dielectric thin films; embedded systems; tantalum compounds; Ta2O5; advanced capacitor dielectrics; bimodal current-voltage characteristic; capacitor characteristics; circuit evaluation; circuit topography; embedded DRAM; memory cell data retention time; static behavior; Application specific integrated circuits; High-K gate dielectrics; Integrated circuit interconnections; Isolation technology; MOS capacitors; Message-oriented middleware; Random access memory; Surfaces; Transistors; Tungsten;
Conference_Titel :
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5809-0
DOI :
10.1109/CICC.2000.852669
