Embedded DRAM: an element and circuit evaluation

Author

Diodato, P.W. ; O´Neil, J.H. ; Wong, Y.-H. ; Alers, G.B. ; Vaidya, H.M. ; Chaudhry, S. ; Lindenberger, W.S. ; Dumbri, A.C. ; Liu, C.T. ; Lai, W.Y.C.

Author_Institution

Lucent Technol. Bell Labs., Murray Hill, NJ, USA

fYear

2000

fDate

2000

Firstpage

291

Lastpage

294

Abstract

Embedded DRAM memory cells employing advanced capacitor dielectrics (Ta₂O₅) have been designed, fabricated, and measured. Memory cell data retention time is used to compare capacitor characteristics between four Ta₂O₅ equipment vendors. Static behavior in one type of DRAM cell is attributed to the bimodal current-voltage characteristic of the Ta₂O₅, and circuit topography

Keywords

DRAM chips; application specific integrated circuits; capacitors; cellular arrays; dielectric thin films; embedded systems; tantalum compounds; Ta₂O₅; advanced capacitor dielectrics; bimodal current-voltage characteristic; capacitor characteristics; circuit evaluation; circuit topography; embedded DRAM; memory cell data retention time; static behavior; Application specific integrated circuits; High-K gate dielectrics; Integrated circuit interconnections; Isolation technology; MOS capacitors; Message-oriented middleware; Random access memory; Surfaces; Transistors; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5809-0

Type

conf

DOI

10.1109/CICC.2000.852669

Filename

852669