Model of hole scattering of strained Si (101)

Based on Fermi´s golden rule and the theory of Boltzmann collision term approximation, taking into account all the scattering mechanisms contributed by ionized impurity, acoustic phonon and non-polar optical phonon, the model of total scattering rate of strained Si/(101) Si1−xGex is established. By calculating the hole scattering rate of strained Si/(101) Si1−xGex and simulating it with Matlab software, it was found that the total scattering rate of hole in strained Si/(101) Si1-xGex decreases obviously with the increasing stress when Ge fraction x is less than 0.2 and the values continue to show a constant tendency. In comparison with one of unstrained Si, the total hole scattering rate of strained Si/(101) Si1−xGex decreases about 45% at most. The hole mobility enhancement in strained Si materials is due to the decreasing hole scattering rate. The result can provide valuable references to the research of hole mobility of strained Si materials and the design of PMOS devices.