Silicon radio integration: architectures and technology: from cartesian zero IF receive & transmit to polar zero I and Q, from silicon bipolar to bulk and SOI CMOS

Author

Sevenhans, Jan

Author_Institution

Alcatel, Antwerpen, Belgium

fYear

2000

fDate

2000

Firstpage

333

Lastpage

340

Abstract

During the nineties we have witnessed a string of advances in Silicon RF integration: from the introduction of the first integrated Si bipolar radios for GSM and DECT in the late eighties to the full single chip integration capabilities today using SiGe BiCMOS technologies. Where RF design used to be a black art, it is becoming a “normal practice” today

Keywords

BiCMOS integrated circuits; CMOS integrated circuits; MMIC; UHF integrated circuits; application specific integrated circuits; bipolar integrated circuits; elemental semiconductors; integrated circuit design; integrated circuit technology; radio receivers; radio transmitters; silicon; silicon-on-insulator; transceivers; RF ASICs; RFIC design; SOI CMOS; Si; Si RF integration; SiGe; SiGe BiCMOS technologies; silicon radio integration; single chip integration; Art; Atomic layer deposition; CMOS technology; Foundries; Germanium silicon alloys; Isolation technology; Radio frequency; Radiofrequency integrated circuits; Silicon germanium; Transceivers;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5809-0

Type

conf

DOI

10.1109/CICC.2000.852679

Filename

852679