• DocumentCode
    2159291
  • Title

    A CMOS voltage-controlled oscillator using high-Q on-chip inductor implemented in a wafer-level package

  • Author

    Yoon, Sang-Woong ; Pinel, Stephan ; Laskar, Joy

  • Author_Institution
    Georgia Electron. Design Center, Georgia Inst. of Technol., Atlanta, GA, USA
  • fYear
    2005
  • fDate
    12-17 June 2005
  • Abstract
    This paper presents a CMOS voltage-controlled oscillator (VCO) with a high-Q inductor in a wafer-level package for the LC-resonator. The on-chip inductor is implemented using the redistribution metal layer of the WLP, and therefore it is called a WLP inductor. Using the thick passivation and copper metallization, the WLP inductor has high quality-factor (Q-factor). A 2nH inductor exhibits a Q-factor of 8 at 2 GHz. The center frequency of the VCO is 2.16 GHz with a tuning range of 385 MHz (18 %). The minimum phase noise is measured to be -120.2 dBc/Hz at an offset frequency of 600 KHz. The DC power consumed by the VCO-core is 1.87 mW with a supply voltage of 1.7 V and a current of 1.1 mA. The output power with a 50 Q load is -12.5 ± 1.3 dBm throughout the whole tuning range. From the best of our knowledge, compared with recently published 2 GHz-band 0.35 μm CMOS VCOs in the literature, the VCO in this work shows the lowest power consumption and the best FOM.
  • Keywords
    CMOS integrated circuits; Q-factor; inductors; integrated circuit metallisation; integrated circuit noise; integrated circuit packaging; low-power electronics; microwave oscillators; passivation; phase noise; voltage-controlled oscillators; 0.35 micron; 1 mA; 1.7 V; 1.87 mW; 2 GHz; 385 MHz; 600 kHz; CMOS voltage-controlled oscillator; LC-resonator; WLP inductor; copper metallization; high-Q on-chip inductor; phase noise; quality-factor; redistribution metal layer; thick passivation; wafer-level package; Copper; Frequency; Inductors; Metallization; Packaging; Passivation; Q factor; Tuning; Voltage-controlled oscillators; Wafer scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2005 IEEE MTT-S International
  • ISSN
    01490-645X
  • Print_ISBN
    0-7803-8845-3
  • Type

    conf

  • DOI
    10.1109/MWSYM.2005.1516933
  • Filename
    1516933