Stacked inductors and 1-to-2 transformers in CMOS technology

Author

Zolfaghari, Alireza ; Chan, Andrew ; Razavi, Behzad

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

fYear

2000

fDate

2000

Firstpage

345

Lastpage

348

Abstract

A modification of stacked spiral inductors increases the self-resonance frequency by 100% with no additional processing steps, yielding values of 5 nH to 266 nH and self-resonance frequencies of 11.2 GHz to 0.5 GHz. Closed-form expressions predicting the self-resonance frequency with less than 5% error have also been developed. A 1-to-2 transformer consisting of 3 stacked spirals achieves a voltage gain of 1.8 at 2.5 GHz. The structures have been fabricated in standard CMOS technologies with four and five metal layers

Keywords

CMOS integrated circuits; MMIC; UHF integrated circuits; equivalent circuits; high-frequency transformers; inductors; integrated circuit design; integrated circuit metallisation; resonance; 0.5 to 11.2 GHz; 1-to-2 transformers; CMOS technology; closed-form expressions; metal layers; self-resonance frequency prediction; stacked spiral inductors; CMOS technology; Capacitance; Circuits; Inductance; Inductors; Resonance; Resonant frequency; Spirals; Transformers; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5809-0

Type

conf

DOI

10.1109/CICC.2000.852681

Filename

852681