Title :
Analysis of transient processes in gate control circuits by an operator method
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
Analysis of gate control circuits by an operator method and description of external actions by unit step functions in the open switch interval allow to estimate transient processes in the whole time domain. It is shown, that transient processes in voltage gate control systems depend on thyristor making angle.
Keywords :
Laplace transforms; power semiconductor switches; thyristor circuits; time-domain analysis; transient analysis; voltage control; Laplace transform; external actions; gate control circuits; harmonic series; inverse transformation; open switch interval; operator method; power semiconductor switches; semiconductor voltage control; switched EMF; thyristor; transient processes; unit step functions; whole time domain; Capacitors; Circuits; Communication system control; Control systems; Laplace equations; Power semiconductor switches; Process control; Thyristors; Transient analysis; Voltage control;
Conference_Titel :
Science and Technology, 2002. KORUS-2002. Proceedings. The 6th Russian-Korean International Symposium on
Print_ISBN :
0-7803-7427-4
DOI :
10.1109/KORUS.2002.1028038
