Small-Signal Model and Microwave Noise Performance of the 0.35μm n and p Type MOSFETs, Scaling Down

DC, RF and noise parameters of the p and n type MOSFETs were investigated. The zero field mobility, output conductance and transconductance were extracted. The complete small signal model was obtained from the combined direct and optimization method. Noise parameters were measured for the set of devices. Wide gate (200 μm) n-MOSFETs exhibited minimum noise figure around 2.5 dB at 6 GHz frequency, which was found lower than for the transistors with narrow (50 μm) gate. The noise performance of the p-MOSFETs was found worse in comparison to n-MOSFETs. The noise model for both p and n type MOSFETs was extracted.