DocumentCode
2159496
Title
Small-Signal Model and Microwave Noise Performance of the 0.35μm n and p Type MOSFETs, Scaling Down
Author
Sakalas, Paulius ; Zirath, Herbert ; Litwin, Andrej
Author_Institution
Semiconductor Physics Institute, 2600 Vilnius, Lithuania, sakalas@uj.pfi.lt, sakalas@ep.chalmers.se; Chalmers University of Technology, Department of Microelectronics, Sweden
fYear
2000
fDate
4-6 Oct. 2000
Firstpage
1
Lastpage
4
Abstract
DC, RF and noise parameters of the p and n type MOSFETs were investigated. The zero field mobility, output conductance and transconductance were extracted. The complete small signal model was obtained from the combined direct and optimization method. Noise parameters were measured for the set of devices. Wide gate (200 μm) n-MOSFETs exhibited minimum noise figure around 2.5 dB at 6 GHz frequency, which was found lower than for the transistors with narrow (50 μm) gate. The noise performance of the p-MOSFETs was found worse in comparison to n-MOSFETs. The noise model for both p and n type MOSFETs was extracted.
Keywords
Circuit noise; MOSFET circuits; Microelectronics; Microwave devices; Noise reduction; Radio frequency; Scattering parameters; Semiconductor device noise; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338605
Filename
4139940
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