DocumentCode
2159512
Title
Temperature Noise Model for MOSFET Noise Characterization
Author
Pascht, A. ; Wiegner, D. ; Berroth, M.
Author_Institution
Institute for Electrical and Optical Communication Engineering, University of Stuttgart, Pfaffenwaldring 47, D-70550 Stuttgart. a.pascht@int.uni-stuttgart.de
fYear
2000
fDate
Oct. 2000
Firstpage
1
Lastpage
4
Abstract
The present CMOS technology produces n-channel MOSFET´s with a transit frequency beyond 30 GHz which are attractive for radio frequency integrated circuits. Especially for applications in the area of mobile communication low noise devices are required. This work presents a temperature noise model which is based on the small-signal equivalent circuit and an analytical description of the channel noise. A complete noise analysis with all four noise parameters is presented. Moreover the dominant noise sources can be determined. Finally the noise figure measurements are compared with the simulation results.
Keywords
CMOS technology; Circuit analysis; Equivalent circuits; Integrated circuit noise; Integrated circuit technology; MOSFET circuits; Mobile communication; Radiofrequency integrated circuits; Semiconductor device modeling; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. 30th European
Conference_Location
Paris, France
Type
conf
DOI
10.1109/EUMA.2000.338606
Filename
4139941
Link To Document