A design and fabrication of the receiver one-chip MMIC for L-band

Author

Shin, Sang-moon ; Kwon, Tae-woon ; Kim, Se-yeol ; Choi, Jae-ha

Author_Institution

Sch. of Electron.-Electron. Inf. Syst. Eng., Ulsan Univ., South Korea

fYear

2002

fDate

2002

Firstpage

367

Lastpage

369

Abstract

This paper describes a design and fabrication of one-chip receiver MMIC for L-band applications. The LNA, double balanced mixer, LO balun, RF balun, IF amplifier and a bias circuit are integrated a chip. Each balun operates active and composed of MESFETs. The new applied bias circuit is able to compensate the variation of the threshold voltage caused by the process variation, temperature changes, etc. The mixer achieves the conversion losses of -14 dB, IP3 of 4 dBm, and port-to-port isolation over 25 dB. The designed chip is fabricated by the ETRI 0.5 μm GaAs MESFET processes. The chip size is 1.4 mm×1.4 mm.

Keywords

MESFET integrated circuits; MMIC mixers; UHF mixers; field effect MMIC; radio receivers; 1 to 2 GHz; GaAs; IF amplifier; L-band; LNA; LO balun; MESFET processes; RF balun; bias circuit; bias compensation circuit; conversion losses; design; double balanced mixer; down-conversion mixer; fabrication; one-chip receiver MMIC; port-to-port isolation; threshold voltage variation; Circuits; Fabrication; Impedance matching; L-band; MESFETs; MMICs; Radio frequency; Radiofrequency amplifiers; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 2002. KORUS-2002. Proceedings. The 6th Russian-Korean International Symposium on

Print_ISBN

0-7803-7427-4

Type

conf

DOI

10.1109/KORUS.2002.1028041

Filename

1028041