Title :
5.5 V tolerant I/O in a 2.5 V 0.25 μm CMOS technology
Author :
Annema, Anne-Johan ; Geelen, Govert ; De Jong, Peter
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
Robust high-voltage tolerant I/O that does not need process options is presented, demonstrated on 5.5 V tolerant open-drain I/O in a 2.5 V 0.25 μm CMOS technology. Circuit techniques limit oxide stress and hot-carrier degradation, resulting in hundreds of years extrapolated lifetime for 5.5 V pad voltage swing, 2.2 V supply voltage, 10 MHz switching frequency. The shown concepts are also implemented in other types of I/O and can easily be scaled towards newer processes
Keywords :
CMOS integrated circuits; hot carriers; integrated circuit reliability; 0.25 micron; 10 MHz; 2.5 V; 5.5 V; CMOS technology; extrapolated lifetime; high-voltage tolerant I/O; hot-carrier degradation; open-drain I/O; oxide stress; pad voltage swing; supply voltage; switching frequency; Application specific integrated circuits; CMOS process; CMOS technology; Degradation; Driver circuits; Electrostatic discharge; Hot carriers; Integrated circuit technology; Steady-state; Voltage;
Conference_Titel :
Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-5809-0
DOI :
10.1109/CICC.2000.852698
