Title :
Statistical limit for miniaturization of polysilicon piezoresistors
Author_Institution :
Dept. of Appl. & Theor. Phys., NSTU Russian Federation, Novosibirsk, Russia
Abstract :
The model of a polysilicon piezoresistor as consisting of a limited number of crystallites having random orientations is considered. It is shown that statistical variations of gauge factor decrease with increase of number of crystallites in piezoresistor.
Keywords :
crystallites; elemental semiconductors; piezoresistance; piezoresistive devices; semiconductor device models; silicon; strain gauges; Si; anisotropic homogeneous material; compliance coefficient; gauge factor; limited number of crystallites; piezoresistance coefficients; polysilicon film; polysilicon piezoresistor model; random orientations; statistical miniaturization limit; Crystallization; Equations; Grain boundaries; Insulation; Physics; Piezoresistance; Piezoresistive devices; Region 8; Silicon; Substrates;
Conference_Titel :
Science and Technology, 2002. KORUS-2002. Proceedings. The 6th Russian-Korean International Symposium on
Print_ISBN :
0-7803-7427-4
DOI :
10.1109/KORUS.2002.1028046
