• DocumentCode
    2159692
  • Title

    Dielectric properties and microstructure of (Sr.Ca)TiO3-based boundary layer capacitor materials

  • Author

    Choi, Woon Shik ; Kim, Chung Hyeok ; Lee, Joon Ung ; Choon-Bae Park ; Lee, Sung Ill

  • Author_Institution
    Dept. of Electr. Eng., Kwangwoon Univ., Seoul, South Korea
  • Volume
    1
  • fYear
    1994
  • fDate
    3-8 Jul 1994
  • Firstpage
    286
  • Abstract
    The dielectric properties and the microstructure of (Sr.Ca)TiO3-based boundary layer (BL) capacitor materials were investigated. (Sr.Ca)TiO3-based compositions were fired at 1350°C in a N2 atmosphere to get the base semiconducting ceramics. The metal oxides of CuO were printed on the semiconducting ceramics and fired at 1200°C for the subsequent grain boundary diffusion. The grain size of the semiconducting ceramics was 20~40 μm and the apparent permittivity of the resulting material varied between 2×104 and 3×104
  • Keywords
    Atmosphere; Capacitors; Ceramics; Composite materials; Dielectric materials; Grain boundaries; Grain size; Microstructure; Semiconductivity; Semiconductor materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Properties and Applications of Dielectric Materials, 1994., Proceedings of the 4th International Conference on
  • Conference_Location
    Brisbane, Qld.
  • Print_ISBN
    0-7803-1307-0
  • Type

    conf

  • DOI
    10.1109/ICPADM.1994.413995
  • Filename
    413995
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2159692