Title :
Seven easy steps for designing the four-terminal silicon pressure piezotransducer
Author :
Gridchin, Alexander V.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The analytical method for designing of the four-terminal silicon pressure piezotransducer (FTSP transducer) with various geometrical form of the current spread region (CSR) is presented. In this paper the crystal planes of silicon [100] and [110] were considered, the optimal places for location as well as the optimal angular orientations of the transducer on the surface of crystal are shown. Various geometrical forms of current spread region of the FTSP transducer, such as circle, square, octagon, symmetrical cross are investigated. As a result, the geometrical correction functions are presented for all investigated. geometrical forms of the CSR. The matrix of resistances, which is allowing to calculate the output voltage and the sensitivity of the FTSP transducer, is presented in this paper as well. The effect of decreasing of planar sizes of the CSR in comparison with depth of the piezosensitive layer is discussed. The circuit for the temperature compensation is suggested.
Keywords :
bridge circuits; compensation; elemental semiconductors; piezoresistive devices; pressure transducers; silicon; Si; analytical design method; boundary problem; crystal planes; current spread region; four-terminal pressure piezotransducer; geometrical correction functions; mechanical stresses; optimal angular orientations; optimal location; output voltage; piezoresistive bridge; planar sizes; sensitivity; temperature compensation; Boundary value problems; Circuits; Conductivity; Piezoresistance; Silicon; Symmetric matrices; Temperature sensors; Transducers; Transmission line matrix methods; Voltage;
Conference_Titel :
Science and Technology, 2002. KORUS-2002. Proceedings. The 6th Russian-Korean International Symposium on
Print_ISBN :
0-7803-7427-4
DOI :
10.1109/KORUS.2002.1028049