Verification of π-equivalent circuit based microwave noise model on AIIIBv HBTs with emphasis on HICUM

Analytical noise model for bipolar transistors, based on π-hybrid equivalent circuit is verified on A_IIIB_v HBTs. Equivalent circuit model parameters are obtained from detailed analysis of HICUM compact model. Since, new analytical model enables the evaluation of noise parameters just using external de-embedded y-parameters, obtained noise parameters are compared to those simulated with HICUM, and to other well known analytical noise equations. Good agreement over a wide range of measured noise parameters proves the model validity for the investigated A_IIIB_v HBTs and enables a correct extraction of noise delay time, which is associated with base and base/collector space charge region transit time and determines the correlation between base and collector current shot noise.