• DocumentCode
    2160051
  • Title

    Small Signal Parameters Extraction for Silicon MOS Transistors

  • Author

    Bracale, A. ; Pasquet, D. ; Gautier, J.L. ; Ferlet, V. ; Fel, N. ; Pelloie, J.L.

  • fYear
    2000
  • fDate
    Oct. 2000
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present in this paper a new extraction procedure for MOS transistors. We deal mainly with extrinsic parameters determination, straightforwardly obtained from S-parameters measurements at cold biases (Vds = OV). We apply our procedure to a MOSFET implemented on SOI substrate.
  • Keywords
    Equivalent circuits; FETs; MESFETs; MOSFET circuits; Microwave devices; Microwave technology; Parameter extraction; Roentgenium; Scattering parameters; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2000. 30th European
  • Conference_Location
    Paris, France
  • Type

    conf

  • DOI
    10.1109/EUMA.2000.338657
  • Filename
    4139964
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2160051