Detection of low intensity light sources

Author

Mitchell, Nick A.

Author_Institution

Dept. of Electr. Eng., Florida State Univ., Tallahassee, FL, USA

fYear

1989

fDate

26-28 Mar 1989

Firstpage

372

Lastpage

375

Abstract

The detection of light from a very poor light source in a high electric field is considered. A design to detect such light emission from a reverse-biased silicon diode with both DC and pulsed inputs is presented. The experimental setup and results are given, and the receiver and the electric pickup are discussed. The gain of the detector circuit is 55 dB with a bandwidth of 14 kHz when a two-stage amplifier is used. If a third stage were added, the bandwidth and gain could easily be increased. A p-i-n photodiode is used in this experiment, but the efficiency could be increased if an avalanche photodiode were used instead

Keywords

light emitting diodes; light sources; optical variables measurement; p-i-n diodes; photodetectors; photodiodes; 14 kHz; high electric field; light emitting diodes; low intensity light sources; optical variables measurement; p-i-n photodiode; reverse-biased Si diode; Avalanche photodiodes; Circuits; Detectors; Light sources; Magnetic shielding; Operational amplifiers; Optical receivers; Signal detection; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

System Theory, 1989. Proceedings., Twenty-First Southeastern Symposium on

Conference_Location

Tallahassee, FL

ISSN

0094-2898

Print_ISBN

0-8186-1933-3

Type

conf

DOI

10.1109/SSST.1989.72494

Filename

72494