A 10 GHz CMOS distributed voltage controlled oscillator

Author

Wu, Hui ; Hajimiri, Ali

Author_Institution

Dept. of Electr. Eng., California Inst. of Technol., Pasadena, CA, USA

fYear

2000

fDate

2000

Firstpage

581

Lastpage

584

Abstract

A 10 GHz CMOS distributed voltage controlled oscillator (DVCO) is designed in a 0.35 μm BiCMOS process technology using only CMOS transistors. The oscillator achieves a tuning range of 12% (9.3 GHz to 10.5 GHz) and a phase noise of -114 dBc/Hz at 1 MHz offset from a carrier frequency of 10.2 GHz. The VCO uses two different simultaneous tuning techniques which allow for a coarse and fine tuning of frequency in a frequency synthesizer. The oscillator provides an output power of -7 dBm without any buffering, drawing 14 mA of DC current from a 2.5 V power supply

Keywords

CMOS analogue integrated circuits; MMIC oscillators; circuit tuning; distributed parameter networks; field effect MMIC; integrated circuit design; integrated circuit noise; phase noise; voltage-controlled oscillators; 0.35 micron; 10 GHz; 14 mA; 2.5 V; 9.3 to 10.5 GHz; BiCMOS process technology; CMOS distributed VCO; CMOS transistors; IC layout; coarse tuning; current-steering delay-balance tuning; distributed voltage controlled oscillator; fine tuning; frequency synthesizer; gate-line tuning; phase noise; simultaneous tuning techniques; tuning range; CMOS process; CMOS technology; Frequency synthesizers; Impedance; Microwave oscillators; Microwave transistors; Phase noise; Silicon; Tuning; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2000. CICC. Proceedings of the IEEE 2000

Conference_Location

Orlando, FL

Print_ISBN

0-7803-5809-0

Type

conf

DOI

10.1109/CICC.2000.852735

Filename

852735