Highly thermal-stable, plasma-polymerized BCB polymer film (k=2.6) for Cu dual-damascene interconnects

Author

Kawahara, J. ; Shiba, K. ; Tagami, M. ; Tada, M. ; Saito, S. ; Onodera, T. ; Kinoshita, K. ; Hiroi, M. ; Furuya, A. ; Kikuta, K. ; Hayashi, Y.

Author_Institution

Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan

fYear

2000

fDate

13-15 June 2000

Firstpage

20

Lastpage

21

Abstract

Highly thermal-stable, plasma-polymerized divinyl siloxane bis-benzocyclobutene (p-BCB)-polymer film is developed for Cu dual-damascene interconnects. The thermal stability of p-BCB is improved over 400/spl deg/C by higher deposition temperature, having high resistance to Cu diffusion at 400/spl deg/C-annealing. Lowering the RF plasma-power and the deposition pressure, the p-BCB film has smaller dielectric constant than the conventional spin-coating BCB (k=2.7). The p-BCB (k=2.6)/Cu interconnects reveal 46% delay reduction of CMOS ring oscillator to the conventional SiO/sub 2//Al ones. The p-BCB is proved as a strong candidate for Cu/low-k interconnects.

Keywords

annealing; copper; dielectric thin films; integrated circuit interconnections; permittivity; polymer films; polymerisation; thermal stability; 400 C; BCB polymer film; CMOS ring oscillator; Cu; Cu dual damascene interconnect; annealing; dielectric constant; diffusion; divinyl siloxane bis-benzocyclobutene; low-k intermetal dielectric; plasma polymerization; thermal stability; Delay; Dielectric constant; Electric resistance; Plasma chemistry; Plasma stability; Plasma temperature; Polymer films; Radio frequency; Thermal resistance; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852752

Filename

852752