Title :
Highly thermal-stable, plasma-polymerized BCB polymer film (k=2.6) for Cu dual-damascene interconnects
Author :
Kawahara, J. ; Shiba, K. ; Tagami, M. ; Tada, M. ; Saito, S. ; Onodera, T. ; Kinoshita, K. ; Hiroi, M. ; Furuya, A. ; Kikuta, K. ; Hayashi, Y.
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Kanagawa, Japan
Abstract :
Highly thermal-stable, plasma-polymerized divinyl siloxane bis-benzocyclobutene (p-BCB)-polymer film is developed for Cu dual-damascene interconnects. The thermal stability of p-BCB is improved over 400/spl deg/C by higher deposition temperature, having high resistance to Cu diffusion at 400/spl deg/C-annealing. Lowering the RF plasma-power and the deposition pressure, the p-BCB film has smaller dielectric constant than the conventional spin-coating BCB (k=2.7). The p-BCB (k=2.6)/Cu interconnects reveal 46% delay reduction of CMOS ring oscillator to the conventional SiO/sub 2//Al ones. The p-BCB is proved as a strong candidate for Cu/low-k interconnects.
Keywords :
annealing; copper; dielectric thin films; integrated circuit interconnections; permittivity; polymer films; polymerisation; thermal stability; 400 C; BCB polymer film; CMOS ring oscillator; Cu; Cu dual damascene interconnect; annealing; dielectric constant; diffusion; divinyl siloxane bis-benzocyclobutene; low-k intermetal dielectric; plasma polymerization; thermal stability; Delay; Dielectric constant; Electric resistance; Plasma chemistry; Plasma stability; Plasma temperature; Polymer films; Radio frequency; Thermal resistance; Thermal stability;
Conference_Titel :
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-6305-1
DOI :
10.1109/VLSIT.2000.852752
