Performance of MOSFETs with ultra thin ZrO/sub 2/ and Zr silicate gate dielectrics

Author

Wen-Jie Qi ; Nieh, R. ; Byoung Hun Lee ; Onishi, K. ; Laegu Kang ; Yongjoo Jeon ; Lee, J.C. ; Kaushik, V. ; Bich-Yen Neuyen ; Prabhu, L. ; Eisenbeiser, K. ; Finder, J.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

fYear

2000

fDate

13-15 June 2000

Firstpage

40

Lastpage

41

Abstract

In this paper, we report the transistor performance of both PMOS and NMOS fabricated with ZrO/sub 2/ and Zr-silicate gate dielectrics. These high-k films exhibit low leakage, low subthreshold swing (S), and good on-off characteristics. Good effective electron and hole mobilities were obtained. It was found that for Zr-silicate, a mobility closer to thermal SiO/sub 2/ was demonstrated due to the better interface with Si substrate.

Keywords

MOSFET; dielectric thin films; electron mobility; hole mobility; leakage currents; permittivity; zirconium compounds; MOSFET; NMOS transistor; PMOS transistor; Zr silicate; ZrO/sub 2/; ZrSiO/sub 4/; electron mobility; high-k film; hole mobility; leakage current; on-off characteristics; subthreshold swing; ultrathin gate dielectric; Charge carrier processes; Dielectric measurements; Dielectric substrates; Electron mobility; High-K gate dielectrics; MOS devices; MOSFETs; Rapid thermal annealing; Thermal stability; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-6305-1

Type

conf

DOI

10.1109/VLSIT.2000.852760

Filename

852760