DocumentCode
2161045
Title
W-Band On-Wafer Noise Parameter Measurements
Author
Vähä-Heikkilä, Tauno ; Lahdes, Manu ; Tuovinen, Jussi ; Kantanen, Mikko ; Kangaslahti, Pekka ; Jukkala, Petri ; Hughes, Nicholas
Author_Institution
MilliLab, VTT Information Technology, P.O. Box 1202, FIN-02044 VTT, Finland. email: Tauno.Vaha-Heikkila@vtt.fi
fYear
2001
fDate
24-26 Sept. 2001
Firstpage
1
Lastpage
4
Abstract
Several current and planned space missions for earth observation and astronomy require very low noise receivers at W-band. Key components in W-band low noise receivers are the InP low noise amplifiers (LNA). The design of LNAs is a greatly dependent at the availability of good noise models for the devices used in the LNAs. To characterise devices at W-band an on-wafer noise parameter set-up has been developed and is presented here. Using the set-up the noise parameters of an InP HEMT in the frequency band 79-94 GHz have been measured. These are the first reported noise parameter measurements of active devices at W-band. The measurement set-up is based on the cold-source method.
Keywords
Active noise reduction; Astronomy; Earth; Extraterrestrial measurements; Frequency measurement; HEMTs; Indium phosphide; Low-noise amplifiers; Noise measurement; Space missions;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2001. 31st European
Conference_Location
London, England
Type
conf
DOI
10.1109/EUMA.2001.338936
Filename
4140004
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