DocumentCode
2161082
Title
Single-layer thin HfO/sub 2/ gate dielectric with n+-polysilicon gate
Author
Kang, L. ; Yongjoo Jeon ; Onishi, K. ; Byoung Hun Lee ; Wen-Jie Qi ; Nieh, R. ; Gopalan, S. ; Lee, J.C.
Author_Institution
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fYear
2000
fDate
13-15 June 2000
Firstpage
44
Lastpage
45
Abstract
MOSCAPs and MOSFETs of a single-layer thin HfO/sub 2/ gate dielectric with n+ polysilicon gate were fabricated and characterized. Polysilicon process was optimized such that leakage current and equivalent oxide thickness of HfO/sub 2/ remained low. Excellent C-V properties (e.g. low Dit and frequency dispersion) and reliability characteristics were obtained. Reasonable MOSFET quality was also demonstrated.
Keywords
MOS capacitors; MOSFET; dielectric thin films; hafnium compounds; C-V characteristics; HfO/sub 2/; MOSCAP; MOSFET; Si; equivalent oxide thickness; frequency dispersion; high-k film; interface state density; leakage current; n+-polysilicon gate; reliability; single layer HfO/sub 2/ gate dielectric; Capacitors; Frequency; Furnaces; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; MOSFETs; Rapid thermal annealing; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-6305-1
Type
conf
DOI
10.1109/VLSIT.2000.852762
Filename
852762
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