DocumentCode
2161145
Title
Making 50 nm transistors with 248 nm lithography
Author
Stolk, P.A. ; Dirksen, P. ; Juffermans, C.A.H. ; Roes, R.F.M. ; Montree, A.H. ; Van Wingerden, J. ; De Laat, W.T.F.M. ; Gehoel-Van Ansem, W.F.J. ; Kaiser, M. ; Kwinten, J.A.J. ; Van Der Poel, C.J.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
2000
fDate
13-15 June 2000
Firstpage
52
Lastpage
53
Abstract
Using a novel phase-shift mask, 50 nm resolution has been achieved with conventional 248 nm lithography. The addition of so-called scattering bars enables within-die control of linewidths from 250 to 50 nm. Using 200 nm thick resist layers combined with hard mask processing, transistors with gate-lengths down to 50 nm have been fabricated. Well controlled device performance is achieved by optimizing offset spacers and pocket implants.
Keywords
MOSFET; phase shifting masks; ultraviolet lithography; 248 nm; 50 nm; DUV lithography; MOS transistor; hard mask processing; linewidth control; offset spacer; phase shift mask; pocket implant; resist layer; scattering bar; Bars; Etching; Implants; Integrated circuit technology; Isolation technology; Light scattering; Lithography; Optical scattering; Resists; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 2000. Digest of Technical Papers. 2000 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-6305-1
Type
conf
DOI
10.1109/VLSIT.2000.852766
Filename
852766
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