Deep dry etching of SOI for silicon micromachined structures

Author

McNie, M.E. ; King, D.O. ; Nayar, V. ; Ward, M.C.L. ; Burdess, J.S. ; Quinn, C. ; Blackstone, S.

Author_Institution

Defence Evaluation Res. Agency, Malvern, UK

fYear

1997

fDate

6-9 Oct 1997

Firstpage

60

Lastpage

61

Abstract

This paper reports on preliminary results in the production of novel silicon micromachined structures in thick Silicon On Insulator (SOI) at DERA (Malvern). Significant interest in SOI for micromachining has existed for several years, however, until recently the quality of SOI material was not sufficiently high to make it a viable alternative to mainstream bulk silicon technology. Specially designed thick SOI layers have been deep dry etched and structures released to demonstrate the applicability of the material and etch technique to micromachining. An exciting combination of the advantages of both surface and bulk micromachining is offered by SOI. The process used is fully compatible with CMOS and it is thought that the SOI material will become of major importance in many areas of micromachining, particularly micro-inertial components

Keywords

micromachining; silicon-on-insulator; sputter etching; SOI material; Si; bulk micromachining; deep dry etching; silicon micromachined structure; surface micromachining; CMOS process; Dielectric substrates; Dry etching; Micromachining; Plasma chemistry; Plasma temperature; Resists; Resonance; Silicon on insulator technology; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634932

Filename

634932